Samsung’s bringing its 3D V-NAND to the next level with “string stacking”
Samsung’s bringing its 3D V-NAND to the next level with “string stacking”
With their latest V-NAND, Samsung is already offering its customers 100 layers of 3-dimensional NAND, with their 6th generation offering 40% more cells per stack, 10% more performance and 15% lower power requirements. In the future, Samsung plans to provide users with higher V-NAND layer counts (200), increased storage speeds, and a technology that goes beyond V-NAND.
Now, Samsung is ready to reveal the future of its V-NAND technology, highlighting what they call “string stacking”. This technique will allow the company to deliver higher V-NAND stacks by layering V-NAND layers on top of each other. When combined with 3D process improvements, Samsung will offer a 2-pronged approach to increased storage density, paving the way towards larger capacity SSDs and new storage solutions for PCs, servers and enterprise systems.
In the future, we can expect Samsung to continue delivering larger 3D NAND densities and larger SSDs for the masses. Only time will tell how these innovations will impact the SSD market.
You can join the discussion on Samsung’s plans to add “string stacking” to its 3D V-NAND on the OC3D Forums.