SK Hynix Samples 12-layer HBM4E memory to customers with boosted speeds

SK Hynix samples 12-high HBM4E memory modules to customers

SK Hynix has officially confirmed that it has started shipping samples of its new HBM4E memory technology to customers, a next-generation memory technology for AI and other use cases.

These new memory modules use a 12-high memory stack and feature a capacity of 48GB per memory stack. SK Hynix also promises 16 Gbps of memory bandwidth per pin and power efficiency up to 20% higher than its HBM4 memory. Additionally, SK Hynix claims that thermal resistance has improved by 17%, making these modules easier to cool.

With HBM4, SK Hynix offers 48GB memory modules with a 16-high-layer stack. This means that SK Hynix’s new HBM4E memory delivers a huge increase in memory density. With 48GB of memory on a 12-layer stack, SK Hynix is delivering 4GB per stack using HBM4E. For HBM4, they delivered 3GB per stack. In theory, this means that a 16-high HBM4E memory stack could deliver 64GB of total memory.

SK Hynix has confirmed that its new memory uses its advanced MR-MUF (Mass Reflow Molded Underfill) technology for die stacking to ensure structural stability.

With this new memory, SK Hynix has showcased a clear path forward for the AI industry. Increased memory bandwidth, density, and power efficiency will enable the creation of faster, more efficient AI accelerators. These accelerators could be vital for the AI industry moving forward. This is especially true as the cost of running AI services has become an increasingly prominent talking point.

You can join the discussion on SK Hynix’s HBM4E memory on the OC3D Forums.