Samsung Memory Moves Forward: 1st 50nm DRAM Chip

Samsung has recently announced that they have moved on to the 50nm manufacturing process for their DDR2 DRAM chips. This allows for increased performance, lower power usage, and cheaper production costs.

The 3D selective epitaxial growth transistor (SEG Tr) is critical to this, allowing a broad electron channel, resolving weak electrical features, and increased storage reliability. Samsung has also adapted their RCAT (Recess Channel Array Transistor) technology for their new 50nm chips, giving essentially double the refresh term of the DRAM.

This process is expected to be used in mass production in 2008.

Press Release

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