Samsung takes DRAM to new heights with half-Terabyte HKMG-Based DDR5 Memory Modules

Samsung’s move to DDR5 will come with a suite of new DRAM innovations, delivering higher raw speeds than DDR4, increased power efficiency and higher capacity modules.  

As the world becomes increasingly compute-dense, Samsung’s preparing to deliver their customers higher capacity DRAM modules at higher speeds than ever before, revealing new DDR5 DRAM modules that deliver 7,200 Mbps speeds and up to 512GB capacities thanks to their High-K Metal Gate (HKMG) process technology. 

Samsung’s working with Intel with its transition to DDR5 memory, with Intel claiming that Samsung’s modules will be compatible with Intel’s upcoming Sapphire Rapids Xeon Scalable processors. AMD was not mentioned in Samsung’s press release. 

With their new 512GB memory modules, Samsung can deliver over 1TB of DRAM to systems with as little as two memory channels. This feat comes thanks to Samsung’s Through-Silicon Via (TSV) technology, which allows the company to stack eight layers of 16Gb DRAM chips to create larger capacity memory chips. 

Samsung has already started sampling its DDR5 memory technology to customers, hoping to validate their ultra-high capacity memory for leading-edge AI, ML, exascale computing, and data-sensitive networking workloads. 

With their new DDR5 memory modules, Samsung claims that they can reach new performance rights while using 13% less power than DDR4 DRAM. This change will allow datacenters to operate much more efficiently by reaching new performance heights while consuming less power.