Samsung ramps up production for their 64-layer 3D V-NAND
Samsung ramps up production for their 64-layer 3D V-NAND
The company currently plans on their new 4th generation V-NAND to cover more than 50% of their monthly NAND flash production by the end of the year.Â
This new 3D V-NAND will offer a lot of improved design characteristics over the company’s previous generation 48-layer 256Gb V-NAND, offering 30% more productivity, 20% more reliability and lower operating voltages (2.5V compared to 3.3V) for improved power consumption. This new NAND will also offer a page program time (tPROG) of 500 microseconds, which is 1.5x faster than Samsung’s previous generation NAND. Â
Samsung plans on creating even more advanced V-NAND in the future, stating that they have secured the fundamental technology that is required to produce V-NAND chips with capacities of 1Tb (250GB), which will require over 90 layers of cell arrays.
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You can join the discussion on Samsung’s new 64-layer V-NAND on the OC3D Forums.
 Â
Samsung ramps up production for their 64-layer 3D V-NAND
The company currently plans on their new 4th generation V-NAND to cover more than 50% of their monthly NAND flash production by the end of the year.Â
This new 3D V-NAND will offer a lot of improved design characteristics over the company’s previous generation 48-layer 256Gb V-NAND, offering 30% more productivity, 20% more reliability and lower operating voltages (2.5V compared to 3.3V) for improved power consumption. This new NAND will also offer a page program time (tPROG) of 500 microseconds, which is 1.5x faster than Samsung’s previous generation NAND. Â
Samsung plans on creating even more advanced V-NAND in the future, stating that they have secured the fundamental technology that is required to produce V-NAND chips with capacities of 1Tb (250GB), which will require over 90 layers of cell arrays.
Â
You can join the discussion on Samsung’s new 64-layer V-NAND on the OC3D Forums.
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