Samsung starts producing 512GB eUFS solutions
Samsung starts producing 512GB eUFS solutions
Samsung has officially revealed the industry’s first 512GB embedded Universal Flash Storage (eUFS) solution, utilising eight of Samsung’s 64-layer 512Gb V-NAND chips in a vertical stack to create their most storage dense eUFS package to date.Â
This new chip can offer sequential read/write speeds of up to 860 MB/s and 255MB/s respectively and deliver random reads and writes of 42,000 and 40,000 IOPs, providing greater performance than the MicroSD cards that many Smartphone users rely on to increase their device’s storage potential. Samsung states that this memory chip can transfer a 5GB full HD video clip to an SSD in around six seconds, which is over eight times faster than a standard SD card.Â
One other innovation that Samsung offers with this chip is a new controller design that offers faster drive mapping and more power efficient operation.Â
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These new eUFS chips can be used in future mart devices to offer increased levels of native storage, allowing users to see improved performance when compared to an equivalent device that uses a MicroSD card to provide the same storage capacities. Â
Samsung has also revealed that they are aggressively increasing the production of their 64-layer 512Gb and 256Gb V-NAND chips to meet the growing demand for high capacity NAND-based storage in the future. This NAND will be used in smartphones, SSDs, removable memory cards and other high-performance file storage devices.Â
You can join the discussion on Samsung’s new 512GB eUFS SSD on the OC3D Forums.Â