Samsung Launches 512GB eUFS 3.0 Memory with 5th Gen V-NAND
Samsung Launches 512GB eUFS 3.0 Memory with 5th Gen V-NAND
This month, Samsung plans to release 512GB and 128GB versions of their eUFS 3.0 storage chips, with plans to release larger 1TB and 256GB versions in the second half of this year.
With these new memory chips, Samsung can offer mobile storage offerings that can provide similar performance levels of notebook-grade SATA SSDs. In terms of random write performance, Samsung has claimed a 36% performance uplift over their existing eUFS 2.1 offerings, delivering 68,000 IOPS of write performance.
In terms of sequential read performance, Samsung’s 512GB eUFS 3.0 memory is said to deliver 2100MB/s of throughput, as well as 410MB/s of sequential write performance. In sequential write performance, Samsung’s eUFS 3.0 storage offering provides a 58% increase in throughput, moving eUFS storage to performance levels that approach that of low-end SATA storage devices.
Below is a table which details Samsung’s UFS storage innovations since the introduction of UFS 2.0 in 2015. This increase in storage performance will enable future storage devices to open apps faster, transfer files faster to external devices and better support the recording and playback of high resolution/framerate media.
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