TSMC reportedly achieves “major breakthrough” for their 2nm MBCFET process

TSMC reportedly achieves

TSMC reportedly achieves “major breakthrough” for their 2nm MBCFET process

Citing sources from Taiwan Economic Daily, GizChina has reported that TSMC has made a “major breakthrough” in the creation of the company’s upcoming 2nm lithography process. 

TSMC is optimistic about starting trail production for 2nm as early as H2 2023, creating the company’s first non-FinFET node. Unlike 5nm and 3nm, TSMC’s 2nm process will utilise an MBCFET-like (Multi-Bridge Channel) design. These transistor designs provide four-sided coverage of the transistor’s channel, reducing power losses while increasing the transistor’s potential performance. 

MBCFET transistors are based on GAAFET designs, preventing current leakage to reduce power loss, and increase power efficiency. Mass production fo 2nm could start as early as 2024, highlighting TSMC’s strong lithography roadmap. 

In the future, both Samsung and Intel plan to utilise MBCFET style transistors, with Intel calling their designs “Nanoribbon” transistors. The move to post FinFET transistors will deliver major advantages to the foundry which can mass-produce them first. Increased transistor efficiency will allow manufacturers to produce more powerful processors that consume less power, making MBCFET transistors an incredibly valuable technology to all chipmakers.  

  

TSMC reportedly achieves

(MBCFET Slide from Samsung)

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TSMC reportedly achieves