SK Hynix teases their next-gen memory announcements ahead of FMS 2024

SK Hynix teases next-gen HBM and NAND advancements ahead of 2024’s Flash Memory Summit

Next week, 2024’s Flash Memory Summit will be hosted in Santa Clara California, and SK Hynix are ready to reveal their next gen memory technologies. In fact, they couldn’t help but tease what the company will be showcasing at the event.

This year, Flash Memory Summit (FMS) has been expanded to include more participants both DRAM and storage technology providers. The growth of AI has seen interest in memory technologies grow, making 2024’s Flash Memory Summit and event that’s worth looking into.

At FMS 2024, SK Hynix plans to discuss two next-generation memory technologies. For starters we have their next-generation AI memory. SK Hynix will be showcasing samples of their new 12-layer HBM3E memory modules. These new modules are due to be mass produced in Q3 2024.

Moving onto NAND Flash, SK Hynix plans to showcase samples of their new 321-layer 3D NAND. This new NAND is due to ship in the first half of 2025. With more NAND layers, this new memory will be more performance and data dense than their existing 3D NAND chips. This will enable the creation of larger, faster storage devices.

At FMS 2024, SK Hynix wants to be seen as a leading provider of both NAND flash and DRAM. Both their NAND and HBM innovations will help to enable the creation of next-generation AI hardware. AI workloads are very memory intensive, and that makes memory advancements just as important as advancements in other areas of AI hardware.

You can join the discussion on SK Hynix’s upcoming memory advancements on the OC3D Forums.