Samsung starts mass producing their 2nd-generation 10nm Class DRAM

Samsung starts mass producing their 2nd-generation 10nm Class DRAM

Samsung starts mass producing their 2nd-generation 10nm Class DRAM

When looking into the memory business, it is difficult to avoid Samsung, offering some of today’s best DRAM and NAND offerings to deliver some of the most compelling products on the market.

Today, it is hard to talk about the memory performance of AMD’s new Ryzen processors without Samsung B-Die memory getting mentioned, or talk about some of the markest fastest memory kits without discovering the use of Samsung memory ICs. Both G.Skill’s new Low-Latency CL17 4,266MHz and Corsair’s compact 4,000MHz DDR4 SODIMMs utilise Samsung-made memory, showcasing exactly how compelling the company’s offerings are. 

Gyoyoung Jin, the president of Samsung Electronic’s Memory Business, has announced that the company are now mass producing 8Gb DRAM products on their second generation 10nm-class manufacturing process. This new production node offers an approximate 30% increase n productivity over DDR4 memory based on Samsung’s older 10nm-class process, delivering performance improvements of around 10% and energy efficiency improvements of approximately 15%.   

These increases in memory performance are due to proprietary circuit designs from Samsung, not using advanced EUV technology. The company states that they are using a so-called “air spacer” to decrease parasitic capacitance. This change reduces energy waste and allows for increased performance scaling and more rapid cell operation. 

This new technology is not just for DDR4 DRAM but is also applicable to future DRAM standards like HBM3, DDR5, GDDR6 and LPDDR5. Samsung now plans to accelerate their plans to bring these faster DRAM products to market, which should ensure their technological leadership as these standards develop. 

Samsung starts mass producing their 2nd-generation 10nm Class DRAM

 

On a pin-by-pin basis, Samsung’s new 2nd Generation 10nm DRAM can operate at 3,600Mbps, delivering a substantial improvement over the 3,200Mbps that is offered by Samsung’s existing memory.  Samsung’s next generation of DDR4 memory will enable the production of high-speed memory kits with less extreme IC binning processes, which could in time reduce the cost of high-speed DDR4 memory.  

You can join the discussion on Samsung’s mass producing their 2nd Generation 10nm DRAM technology on the OC3D Forums. 

Samsung starts mass producing their 2nd-generation 10nm Class DRAM

Samsung starts mass producing their 2nd-generation 10nm Class DRAM

When looking into the memory business, it is difficult to avoid Samsung, offering some of today’s best DRAM and NAND offerings to deliver some of the most compelling products on the market.

Today, it is hard to talk about the memory performance of AMD’s new Ryzen processors without Samsung B-Die memory getting mentioned, or talk about some of the markest fastest memory kits without discovering the use of Samsung memory ICs. Both G.Skill’s new Low-Latency CL17 4,266MHz and Corsair’s compact 4,000MHz DDR4 SODIMMs utilise Samsung-made memory, showcasing exactly how compelling the company’s offerings are. 

Gyoyoung Jin, the president of Samsung Electronic’s Memory Business, has announced that the company are now mass producing 8Gb DRAM products on their second generation 10nm-class manufacturing process. This new production node offers an approximate 30% increase n productivity over DDR4 memory based on Samsung’s older 10nm-class process, delivering performance improvements of around 10% and energy efficiency improvements of approximately 15%.   

These increases in memory performance are due to proprietary circuit designs from Samsung, not using advanced EUV technology. The company states that they are using a so-called “air spacer” to decrease parasitic capacitance. This change reduces energy waste and allows for increased performance scaling and more rapid cell operation. 

This new technology is not just for DDR4 DRAM but is also applicable to future DRAM standards like HBM3, DDR5, GDDR6 and LPDDR5. Samsung now plans to accelerate their plans to bring these faster DRAM products to market, which should ensure their technological leadership as these standards develop. 

Samsung starts mass producing their 2nd-generation 10nm Class DRAM

 

On a pin-by-pin basis, Samsung’s new 2nd Generation 10nm DRAM can operate at 3,600Mbps, delivering a substantial improvement over the 3,200Mbps that is offered by Samsung’s existing memory.  Samsung’s next generation of DDR4 memory will enable the production of high-speed memory kits with less extreme IC binning processes, which could in time reduce the cost of high-speed DDR4 memory.  

You can join the discussion on Samsung’s mass producing their 2nd Generation 10nm DRAM technology on the OC3D Forums.